1-6 September 2019
Lanzhou
Asia/Shanghai timezone
The deadline for the ICIS 2019 manuscript submission is extended to September 30. All oral presentations have been uploaded on the page of 'timetable'.

Generation of boron ion beam by different methods

5 Sep 2019, 09:20
20m
Lanzhou

Lanzhou

No. 1 Beibinhe East Road, Chengguan District, Lanzhou
Contributed oral

Speaker

Prof. Efim Oks (HCEI)

Description

The report provides an overview of recent work on the generation of boron ions in the laboratory of Plasma Sources of the Institute of High-Current Electronics, Tomsk, Russia. To obtain boron ions, pulsed discharge systems of a vacuum arc discharge and a high-current magnetron discharge in self-sputtering mode were used. In both discharge systems, cathodes from pure boron and lanthanum hexaboride were used to generate boron-containing plasma. In the experiments, the main attention was paid to the study of the mass-charge composition of the ion beam and the search for conditions provided the achievement of the maximum fraction of boron ions in the ion beam.

Category of your contribution Fundamental processes in ion source, plasma

Primary authors

Prof. Efim Oks (HCEI) Prof. George Yushkov (High Current Electronics Institute) Dr Alexey Nikolaev (High Current Electronics Institute) Prof. Alexey Vizir (High Current Electronics Institute) Dr Vasily Gushenets (High Current Electronics Institute) Dr Konstantin Savkin (High Current Electronics Institute) Dr Maxim Shandrikov (High Current Electronics Institute)

Presentation Materials

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